Deep-level traps in as-grown and electron-irradiated homo-epitaxial n-GaN layers grown by MOVPE

Overview of attention for article published in Microelectronic Engineering, April 2023

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Our latest paper describing the effects of electron irradiation on the formation and electrical characteristics of specific deep level defects in the industrially important n-GaN wide bandgap semiconductor alloy @PSI_UoM @UoM_EEE @UoMSciEng https://t.co/Dn

13 Mar 2023

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