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Forming-Free and Non-linear Resistive Switching in Bilayer HfOx/TaOx Memory Devices by Interface-Induced Internal Resistance

Overview of attention for article published in Electronic Materials Letters, February 2024
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About this Attention Score

  • Among the highest-scoring outputs from this source (#20 of 135)
  • Good Attention Score compared to outputs of the same age (69th percentile)

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