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Atomistic tight-binding study of electronic structure and interband optical transitions in GaBi x As 1−x /GaAs…

Overview of attention for article published in Applied Physics Letters, February 2014
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Title
Atomistic tight-binding study of electronic structure and interband optical transitions in GaBi x As 1−x /GaAs quantum wells
Published in
Applied Physics Letters, February 2014
DOI 10.1063/1.4865827
Authors

Muhammad Usman, Eoin P. O'Reilly

Mendeley readers

The data shown below were compiled from readership statistics for 15 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Germany 1 7%
Unknown 14 93%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 4 27%
Researcher 3 20%
Professor 3 20%
Lecturer 1 7%
Student > Doctoral Student 1 7%
Other 2 13%
Unknown 1 7%
Readers by discipline Count As %
Physics and Astronomy 5 33%
Materials Science 4 27%
Engineering 4 27%
Chemistry 1 7%
Unknown 1 7%