Annealing of ion implanted gallium nitride

Overview of attention for article published in Applied Physics Letters, March 1998

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In the top 25% of all research outputs scored by Altmetric
Good Attention Score compared to outputs of the same age (73rd percentile)
Good Attention Score compared to outputs of the same age and source (77th percentile)

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patent: 2 patents

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mendeley: 25 Mendeley

Summary Patents

So far, Altmetric has seen 2 patents that reference this research output.

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Application JP-2013131736-A

Japan

Method to reduce crystal defects particularly in group III-nitride layers and substrates

Grant US-7341628-B2

United States of America

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