Junctionless nanowire transistor fabricated with high mobility Ge channel

Overview of attention for article published in physica status solidi (RRL)-Rapid Research Letters, October 2013

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Good Attention Score compared to outputs of the same age (70th percentile)

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So far, Dimensions has found 19 publications that cite this research output.

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The most recent citing publications are shown below. View all 19 publications that cite this research output on Dimensions.

Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

Article in Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (August 2023)

Selective-area growth of GaN and AlGaN nanowires on N-polar GaN templates with 4° miscut by plasma-assisted molecular beam epitaxy

Article in Journal of Crystal Growth (June 2023)

Physics and Electrical Diagnostics of Nanoelectronic Silicon-On-Insulator Structures and Devices

Book (January 2023)

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