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Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Overview of attention for article published in Discover Nano, September 2014
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Title
Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors
Published in
Discover Nano, September 2014
DOI 10.1186/1556-276x-9-517
Pubmed ID
Authors

Suhana M Sultan, Nonofo J Ditshego, Robert Gunn, Peter Ashburn, Harold MH Chong

Abstract

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm(2)/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm(2)/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing.

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 28 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 28 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 8 29%
Student > Master 4 14%
Student > Doctoral Student 3 11%
Lecturer > Senior Lecturer 2 7%
Researcher 2 7%
Other 4 14%
Unknown 5 18%
Readers by discipline Count As %
Materials Science 9 32%
Engineering 6 21%
Biochemistry, Genetics and Molecular Biology 2 7%
Chemistry 2 7%
Energy 1 4%
Other 1 4%
Unknown 7 25%