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Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances

Overview of attention for article published in Nanoscale Research Letters, August 2016
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Title
Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances
Published in
Nanoscale Research Letters, August 2016
DOI 10.1186/s11671-016-1567-6
Pubmed ID
Authors

Martijn van Sebille, Jort Allebrandi, Jim Quik, René A.C. M. M. van Swaaij, Frans D. Tichelaar, Miro Zeman

Abstract

We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.

Mendeley readers

The data shown below were compiled from readership statistics for 13 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 13 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 4 31%
Student > Master 4 31%
Unspecified 3 23%
Student > Postgraduate 1 8%
Other 1 8%
Other 0 0%
Readers by discipline Count As %
Physics and Astronomy 4 31%
Unspecified 3 23%
Engineering 3 23%
Materials Science 2 15%
Chemistry 1 8%
Other 0 0%