High Dielectric Constant Materials

Chapter 1 The Economic Implications of Moore's Law

Chapter 2 Brief Notes on the History of Gate Dielectrics in MOS Devices

Chapter 3 SiO 2 Based MOSFETS: Film Growth and Si—SiO 2 Interface Properties

Chapter 4 Oxide Reliability Issues

Chapter 5 Gate Dielectric Scaling to 2.0—1.0 nm: SiO 2 and Silicon Oxynitride

Chapter 7 Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation

Chapter 8 Alternative Dielectrics for Silicon-Based Transistors: Selection Via Multiple Criteria

Chapter 9 Materials Issues for High-k Gate Dielectric Selection and Integration

Chapter 10 Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks

Chapter 11 Electronic Structure of Alternative High-k Dielectrics

Chapter 12 Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon

Chapter 13 High-k Gate Dielectric Deposition Technologies

Chapter 14 Issues in Metal Gate Electrode Selection for Bulk CMOS Devices

Chapter 15 CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials

Chapter 16 Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films

Chapter 17 Electrical Measurement Issues for Alternative Gate Stack Systems

Chapter 18 High-k Gate Dielectric Materials Integrated Circuit Device Design Issues

Chapter 19 High-k Crystalline Gate Dielectrics: A Research Perspective

Chapter 20 High-k Crystalline Gate Dielectrics: An IC Manufacturer's Perspective

Chapter 21 Advanced MOS-Devices