III-Nitride Based Light Emitting Diodes and Applications

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Table of Contents

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Book Overview
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Chapter 1 Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides
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Chapter 2 Ultra-Efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches
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Chapter 3 LEDs Based on Heteroepitaxial GaN on Si Substrates
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Chapter 4 Epitaxial Growth of GaN on Patterned Sapphire Substrates
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Chapter 5 Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs
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Chapter 6 Internal Quantum Efficiency in Light-Emitting Diodes
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Chapter 7 Internal Quantum Efficiency
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Chapter 8 III-Nitride Tunnel Junctions and Their Applications
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Chapter 9 Green, Yellow, and Red LEDs
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Chapter 10 AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
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Chapter 11 Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs
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Chapter 12 Light Extraction of High-Efficient Light-Emitting Diodes
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Chapter 13 Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs
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Chapter 14 Phosphors and White LED Packaging
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Chapter 15 High-Voltage LEDs
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Chapter 16 Color Quality of White LEDs
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Chapter 17 Emerging System Level Applications for LED Technology

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Refractive Index Engineering as a New Degree of Freedom for Designing High‐Performance AlGaN‐Based Ultraviolet C Light‐Emitting Diodes

Article in Advanced Photonics Research (November 2023)

Direct-ink-writing 3D-printed bioelectronics

Article in Materials Today (September 2023)

Review: III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy

Article in Semiconductor Science and Technology (April 2023)

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