Title |
A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3
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Published in |
Nature Communications, January 2013
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DOI | 10.1038/ncomms2394 |
Pubmed ID | |
Authors |
Y. Z. Chen, N. Bovet, F. Trier, D. V. Christensen, F. M. Qu, N. H. Andersen, T. Kasama, W. Zhang, R. Giraud, J. Dufouleur, T. S. Jespersen, J. R. Sun, A. Smith, J. Nygård, L. Lu, B. Büchner, B. G. Shen, S. Linderoth, N. Pryds |
Abstract |
The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO(3) and SrTiO(3), provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm(2) V(-1) s(-1) (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO(3) and a spinel γ-Al(2)O(3) epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices. |
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Student > Master | 24 | 9% |
Professor > Associate Professor | 22 | 8% |
Student > Bachelor | 15 | 5% |
Other | 40 | 14% |
Unknown | 47 | 17% |
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Engineering | 16 | 6% |
Chemistry | 14 | 5% |
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Other | 7 | 3% |
Unknown | 56 | 20% |