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Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

Overview of attention for article published in Nanoscale Research Letters, February 2015
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Title
Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
Published in
Nanoscale Research Letters, February 2015
DOI 10.1186/s11671-015-0815-5
Pubmed ID
25852385
Authors

Sannian Song, Dongning Yao, Zhitang Song, Lina Gao, Zhonghua Zhang, Le Li, Lanlan Shen, Liangcai Wu, Bo Liu, Yan Cheng, Songlin Feng

Abstract

Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)2 N]4, Sb [(CH3)2 N]3, Te(C4H9)2 as precursors and plasma-activated H2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials.

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Twitter Demographics

The data shown below were collected from the profile of 1 tweeter who shared this research output. Click here to find out more about how the information was compiled.

Mendeley readers

The data shown below were compiled from readership statistics for 36 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Korea, Republic of 1 3%
Unknown 35 97%

Demographic breakdown

Readers by professional status Count As %
Student > Master 7 19%
Researcher 6 17%
Student > Ph. D. Student 4 11%
Student > Doctoral Student 3 8%
Student > Bachelor 2 6%
Other 9 25%
Unknown 5 14%
Readers by discipline Count As %
Materials Science 14 39%
Engineering 10 28%
Physics and Astronomy 2 6%
Unspecified 2 6%
Agricultural and Biological Sciences 1 3%
Other 1 3%
Unknown 6 17%

Attention Score in Context

This research output has an Altmetric Attention Score of 1. This is our high-level measure of the quality and quantity of online attention that it has received. This Attention Score, as well as the ranking and number of research outputs shown below, was calculated when the research output was last mentioned on 06 March 2015.
All research outputs
#7,804,912
of 12,440,542 outputs
Outputs from Nanoscale Research Letters
#275
of 798 outputs
Outputs of similar age
#117,876
of 218,987 outputs
Outputs of similar age from Nanoscale Research Letters
#1
of 1 outputs
Altmetric has tracked 12,440,542 research outputs across all sources so far. This one is in the 23rd percentile – i.e., 23% of other outputs scored the same or lower than it.
So far Altmetric has tracked 798 research outputs from this source. They receive a mean Attention Score of 2.2. This one has gotten more attention than average, scoring higher than 54% of its peers.
Older research outputs will score higher simply because they've had more time to accumulate mentions. To account for age we can compare this Altmetric Attention Score to the 218,987 tracked outputs that were published within six weeks on either side of this one in any source. This one is in the 36th percentile – i.e., 36% of its contemporaries scored the same or lower than it.
We're also able to compare this research output to 1 others from the same source and published within six weeks on either side of this one. This one has scored higher than all of them

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