Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Overview of attention for article published in IEEE Transactions on Electron Devices, May 2015

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patent: 3 patents

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So far, Altmetric has seen 3 patents that reference this research output.

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

Application EP-4312277-A1

European Patent Office

Semiconductor structure with enhanced withstand voltage

Grant US-9923061-B2

United States of America

SEMICONDUCTOR STRUCTURE WITH ENHANCED WITHSTAND VOLTAGE

Application US-20170084697-A1

United States of America

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