Deep levels created by low energy electron irradiation in 4H-SiC

Overview of attention for article published in Journal of Applied Physics, November 2004

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So far, Altmetric has seen 4 patents that reference this research output.

Method for improving the quality of a SiC crystal

Grant US-8815708-B2

United States of America

SiC crystal semiconductor device

Grant US-7834362-B2

United States of America

Method for improving the quality of a SiC crystal

Grant US-7754589-B2

United States of America

Method for improving the quality of an SiC crystal and an SiC semiconductor device

Grant US-7737011-B2

United States of America

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