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Influence of growth kinetics on Sn incorporation in direct band gap Ge 1−x Sn x nanowires

Overview of attention for article published in Journal of Materials Chemistry C: Materials for optical and electronic devices, January 2018
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About this Attention Score

  • High Attention Score compared to outputs of the same age and source (84th percentile)

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2 X users

Citations

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19 Dimensions

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24 Mendeley
Summary X Dimensions citations
So far, Dimensions has found 19 publications that cite this research output.

19

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