Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Overview of attention for article published in Applied Physics Letters, December 2015

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Heterostructure for high electron mobility transistor and its manufacturing method

Application JP-7039684-B2

Japan

A HETEROSTRUCTURE FOR A HIGH ELECTRON MOBILITY TRANSISTOR AND A METHOD OF PRODUCING THE…

Application WO-2019015754-A1

World Intellectual Property Organisation (WIPO)

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