Investigation of defects influencing performance of type-II InAs/GaInSb superlattice based infrared PIN type photodetectors
Article in Journal of Applied Physics (June 2019)
The most recent citing publications are shown below. View all 3 publications that cite this research output on Dimensions.
Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation
Article in physica status solidi (a) – applications and materials science (October 2016)
The nucleation structure for cracks in AlGaN epitaxial layers
Book chapter (January 2005)