Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

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One of Applied Physics Letters most cited articles: Temperature-dependent capacitance–voltage and current–voltage…

One of Applied Physics Letters most cited articles: Temperature-dependent capacitance–voltage and current–voltage…

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes…

We investigated the temperature-dependent electrical properties of Pt/Ga2O3Schottky barrierdiodes (SBDs) fabricated on n–-Ga2O3…

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