14 followers
RT @AIP_Publishing: Significant dislocation reduction in highly uniform GaN rod arrays targeting electronic devices is achieved using a top…
RT @AIP_Publishing: Significant dislocation reduction in highly uniform GaN rod arrays targeting electronic devices is achieved using a top…
Significant dislocation reduction in highly uniform GaN rod arrays targeting electronic devices is achieved using a top-down etch process followed by rod shrinkage, anneal and lateral overgrowth. @TyndallInstitut @QUBMathsPhys @illinoistech https://t.co/P1
Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD #CVDep https://t.co/R8PFjNz2ou