Highly improved performance of a 350nm ultraviolet light-emitting diode containing AlxGa1−xN/AlyGa1−yN distributed Bragg reflectors

Overview of attention for article published in Journal of Crystal Growth, July 2004

Altmetric Badge

Mentioned by

patent: 2 patents

Citations

dimensions_citation: 8 Dimensions

Readers on

mendeley: 17 Mendeley

Summary Patents Dimensions citations

So far, Altmetric has seen 2 patents that reference this research output.

III-N based substrate for power electronic devices and method for manufacturing same

Application US-10192959-B2

United States of America

Metallic contact for optoelectronic semiconductor device

Grant US-9312448-B2

United States of America

This page shows the most recent patents that mention this research output.

Click here to find out how to access more activity.