Ab initio study of the mechanism of carbonization of {111} Si-substrate at high temperature
Article in Materials Chemistry and Physics (April 2024)
The most recent citing publications are shown below. View all 14 publications that cite this research output on Dimensions.
Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS)
Article in Journal of Crystal Growth (June 2023)
Effect of substrate temperature and annealing on the structure and opto-electrical properties of silicon carbide thin films prepared by e-beam evaporation
Article in Vacuum (May 2023)