Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Overview of attention for article published in Journal of Crystal Growth, February 2009

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Method for manufacturing silicon carbide semiconductor device

Application EP-2704183-A3

European Patent Office

EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME

Application EP-2395133-A4

European Patent Office

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