Reducing stress in silicon carbide epitaxial layers

Overview of attention for article published in Journal of Crystal Growth, May 2003

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In the top 25% of all research outputs scored by Altmetric
Good Attention Score compared to outputs of the same age (71st percentile)
Good Attention Score compared to outputs of the same age and source (76th percentile)

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patent: 4 patents

Citations

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mendeley: 11 Mendeley

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So far, Altmetric has seen 4 patents that reference this research output.

Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single…

Grant US-8716718-B2

United States of America

Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single…

Grant US-8293623-B2

United States of America

EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SiC SINGLE…

Application EP-2196566-A4

European Patent Office

EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SiC SINGLE…

Application EP-2196566-A1

European Patent Office

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