Optimizing HVPE flow field to achieve GaN crystal uniform growth
Article in Journal of Crystal Growth (July 2023)
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Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes
Article in Semiconductor Science and Technology (February 2021)
Comparison study of GaN films grown on porous and planar GaN templates**Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404201), the State Key R&D Program of Jiangsu Province, China (Grant No. BE2019103), the Six-Talent Peaks Project of Jiangsu Province, China (Grant No. XCL-107), the Fund from the Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.
Article in Chinese Physics B (February 2020)