Precursors for carbon doping of GaN in chemical vapor deposition

Overview of attention for article published in Journal of Vacuum Science and Technology B, March 2015

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First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD

Article in Crystals (October 2023)

Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance

Preprint in arXiv (April 2023)

A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

Article in Micromachines (March 2023)

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