Properties and origins of different stacking faults that cause degradation in SiC PiN diodes

Overview of attention for article published in Journal of Applied Physics, February 2004

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SIC epitaxial wafer and method for manufacturing same

Grant US-9287121-B2

United States of America

Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single…

Grant US-8716718-B2

United States of America

Method for recovering an on-state forward voltage and, shrinking stacking faults in…

Grant US-8455269-B2

United States of America

Process for producing silicon carbide semiconductor device

Grant US-8367510-B2

United States of America

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