Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
Article in IEEE Transactions on Electron Devices (May 2024)
The most recent citing publications are shown below. View all 63 publications that cite this research output on Dimensions.
Tailoring Electronic Properties of 6H‐SiC with Different Composition of Silicon by First‐Principles Calculations
Article in Advanced Theory and Simulations (April 2024)
Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates
Article in Applied Physics Letters (April 2024)