Towards high-mobility In2xGa2–2xO3 nanowire field-effect transistors

Overview of attention for article published in Nano Research, June 2018

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Towards high-mobility In2xGa2–2xO3 nanowire field-effect transistors. https://t.co/mkXTEPO9yZ from Johnny C. Ho, @CityUHongKong https://t.co/C7pU77hxuh

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