Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model

Overview of attention for article published in Journal of Mathematics in Industry, December 2018

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RT @brookes_oa: @Arm_Coco @obuecm @ResearchTDE & colleagues @uni_ct: By using a hydrodynamic model, the low-field mobility of a Gate-All-Ar…

@Arm_Coco @obuecm @ResearchTDE & colleagues @uni_ct: By using a hydrodynamic model, the low-field mobility of a Gate-All-Around SiNW transistor has been evaluated. Published #OpenAccess: https://t.co/14g9YX2Rjj https://t.co/54QupDlZ2E

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