Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer

Overview of attention for article published in Applied Physics Letters, October 2005

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patent: 3 patents

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So far, Altmetric has seen 3 patents that reference this research output.

Light emitting device

Grant US-9997666-B2

United States of America

Light emitting device

Application EP-2709172-A3

European Patent Office

Light emitting device

Application CN-103682017-A

China

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