Characterization of a n+3C/n−4H SiC heterojunction diode

Overview of attention for article published in Applied Physics Letters, April 2016

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Characterization of a n+3C/n−4H SiC heterojunction diode https://t.co/hhMTHb8Ap5

#AppliedPhysics Characterization of a n+3C/n−4H SiC heterojunction diode: We report on the fabrication of n + ... https://t.co/C4OSWal1oU

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