基于poly-Si键合层的SACM型Ge/Si APD的优化设计研究
Article in Chinese Journal of Lasers (January 2024)
The most recent citing publications are shown below. View all 8 publications that cite this research output on Dimensions.
Phosphor-free micro-pyramid InGaN-based white light-emitting diode with a high color rendering index on a β-Ga2O3 substrate.
Article in Optics Letters (January 2024)
Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
Article in PLOS ONE (November 2022)