A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors
Article in IEEE Transactions on Device and Materials Reliability (March 2024)
The most recent citing publications are shown below. View all 3 publications that cite this research output on Dimensions.
Article in IEEE Transactions on Device and Materials Reliability (March 2024)
Article in Microsystem Technologies (February 2024)
Article in Micro and Nanostructures (February 2024)