Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga2O3 substrate

Overview of attention for article published in International Journal of Numerical Modelling, June 2023

Altmetric Badge

About this Attention Score

Average Attention Score compared to outputs of the same age

Mentioned by

twitter: 1 X user

Readers on

mendeley: 4 Mendeley

So far, Altmetric has seen 1 X post from an account with 28 followers.

https://t.co/payrQYIgcj

Reply Repost Favourite

This page shows the most recent X posts that mention this research output.

Click here to find out how to access more activity.