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Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Overview of attention for article published in Discover Nano, March 2015
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Title
Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
Published in
Discover Nano, March 2015
DOI 10.1186/s11671-015-0846-y
Pubmed ID
Authors

Lai-Guo Wang, Xu Qian, Yan-Qiang Cao, Zheng-Yi Cao, Guo-Yong Fang, Ai-Dong Li, Di Wu

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 110 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 110 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 29 26%
Student > Master 15 14%
Researcher 11 10%
Other 6 5%
Student > Bachelor 4 4%
Other 13 12%
Unknown 32 29%
Readers by discipline Count As %
Materials Science 30 27%
Physics and Astronomy 19 17%
Engineering 15 14%
Chemistry 5 5%
Energy 1 <1%
Other 2 2%
Unknown 38 35%