Method for a GaN vertical microcavity surface emitting laser (VCSEL) Grant US-11095096-B2 United States of America 17 Aug 2021
Method for GaN vertical microcavity surface emitting laser (VCSEL) Grant US-11043792-B2 United States of America 22 Jun 2021
Method to make buried, highly conductive p-type III-nitride layers Grant US-11018231-B2 United States of America 25 May 2021
Method and device concerning III-nitride edge emitting laser diode of high confinement… Application US-10554017-B2 United States of America 04 Feb 2020