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Technology of Gallium Nitride Crystal Growth

Overview of attention for book
Cover of 'Technology of Gallium Nitride Crystal Growth'

Table of Contents

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    Book Overview
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    Chapter 1 Development of the Bulk GaN Substrate Market
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    Chapter 2 Hydride Vapor Phase Epitaxy of GaN
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    Chapter 3 Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds
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    Chapter 4 Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology
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    Chapter 5 Nonpolar and Semipolar GaN Growth by HVPE
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    Chapter 6 High Growth Rate MOVPE
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    Chapter 7 Ammonothermal Growth of GaN Under Ammono-Basic Conditions
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    Chapter 8 A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method
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    Chapter 9 Acidic Ammonothermal Growth Technology for GaN
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    Chapter 10 High Pressure Solution Growth of Gallium Nitride
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    Chapter 11 A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal
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    Chapter 12 Low Pressure Solution Growth of Gallium Nitride
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    Chapter 13 Optical Properties of GaN Substrates
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    Chapter 14 Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy
Attention for Chapter 6: High Growth Rate MOVPE
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Citations

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Chapter title
High Growth Rate MOVPE
Chapter number 6
Book title
Technology of Gallium Nitride Crystal Growth
Published in
ADS, January 2010
DOI 10.1007/978-3-642-04830-2_6
Book ISBNs
978-3-64-204828-9, 978-3-64-204830-2
Authors

K. Matsumoto, H. Tokunaga, A. Ubukata, K. Ikenaga, Y. Fukuda, Y. Yano, T. Tabuchi, Y. Kitamura, S. Koseki, A. Yamaguchi, K. Uematsu

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Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 5 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 5 100%

Demographic breakdown

Readers by professional status Count As %
Student > Doctoral Student 2 40%
Researcher 1 20%
Student > Bachelor 1 20%
Unknown 1 20%
Readers by discipline Count As %
Materials Science 4 80%
Unknown 1 20%

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