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Reaction method control of impurity scattering in C-doped MgB 2 : proving the role of defects besides C substitution level

Overview of attention for article published in Superconductor Science & Technology, November 2013
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Title
Reaction method control of impurity scattering in C-doped MgB 2 : proving the role of defects besides C substitution level
Published in
Superconductor Science & Technology, November 2013
DOI 10.1088/0953-2048/26/12/125018
Authors

S K Chen, K Y Tan, A S Halim, X Xu, K S B De Silva, W K Yeoh, S X Dou, A Kursumovic, J L MacManus-Driscoll

Mendeley readers

The data shown below were compiled from readership statistics for 14 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
United Kingdom 1 7%
Unknown 13 93%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 7 50%
Student > Bachelor 2 14%
Professor 2 14%
Researcher 1 7%
Student > Doctoral Student 1 7%
Other 1 7%
Readers by discipline Count As %
Materials Science 4 29%
Physics and Astronomy 4 29%
Engineering 3 21%
Energy 1 7%
Chemistry 1 7%
Other 1 7%