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Mendeley readers
Chapter title |
Surface Study of AlGaN/GaN High Electron Mobility Transistor for Fabrication Process Improvement
|
---|---|
Chapter number | 42 |
Book title |
The Physics of Semiconductor Devices
|
Published by |
Springer, Cham, December 2017
|
DOI | 10.1007/978-3-319-97604-4_42 |
Book ISBNs |
978-3-31-997603-7, 978-3-31-997604-4
|
Authors |
Rupesh Kumar Chaubey, Anshu Goyal, Robert Laishram, Sonalee Chopra, Amit, Niraj Kumar, Prateek Kumar, Hemant Kumar Saini, Chaubey, Rupesh Kumar, Goyal, Anshu, Laishram, Robert, Chopra, Sonalee, Kumar, Niraj, Kumar, Prateek, Saini, Hemant Kumar |
Mendeley readers
The data shown below were compiled from readership statistics for 1 Mendeley reader of this research output. Click here to see the associated Mendeley record.
Geographical breakdown
Country | Count | As % |
---|---|---|
Unknown | 1 | 100% |
Demographic breakdown
Readers by professional status | Count | As % |
---|---|---|
Student > Ph. D. Student | 1 | 100% |
Readers by discipline | Count | As % |
---|---|---|
Unknown | 1 | 100% |