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Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

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Cover of 'Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications'

Table of Contents

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    Book Overview
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    Chapter 2 RE Implantation and Annealing of III-Nitrides
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    Chapter 3 Lattice Location of RE Impurities in IIINitrides
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    Chapter 4 Electroluminescent Devices Using RE-Doped III-Nitrides
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    Chapter 5 Er-Doped GaN and InxGa1-xN for Optical Communications
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    Chapter 6 Rare-Earth-Doped GaN Quantum Dot
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    Chapter 7 Visible Luminescent RE-doped GaN, AlGaN and AlInN
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    Chapter 8 Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride
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    Chapter 9 Excitation Mechanisms of RE Ions in Semiconductors
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    Chapter 10 High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd
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    Chapter 11 Summary and Prospects for Future Work
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    Chapter 33 Theoretical Modelling of Rare Earth Dopants in GaN
Attention for Chapter 11: Summary and Prospects for Future Work
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Chapter title
Summary and Prospects for Future Work
Chapter number 11
Book title
Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
Published in
ADS, January 2010
DOI 10.1007/978-90-481-2877-8_11
Book ISBNs
978-9-04-812876-1, 978-9-04-812877-8
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