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Si Detectors and Characterization for HEP and Photon Science Experiment

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Cover of 'Si Detectors and Characterization for HEP and Photon Science Experiment'

Table of Contents

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    Book Overview
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    Chapter 1 Development of Si Detectors for the CMS LHC Experiments
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    Chapter 2 Physics and Technology of Si Detectors
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    Chapter 3 Performance of MCz Si Material for p + n − n + and n + p − p + Si Sensor Design: Status and Development for HL-LHC
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    Chapter 4 Development of Radiation Hard Pixel Detectors for the European XFEL
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    Chapter 5 T-CAD Simulation for the Designing of Detectors
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    Chapter 6 Development of Radiation Hard p + n Si Pixel Sensors for the European XFEL
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    Chapter 7 Analysis & Optimal Design of Radiation Hard p + n Si Pixel Detector for the Next generation Photon Science Experiments
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    Chapter 8 Capacitances in P + N Silicon Pixel Sensors Using 3-D TCAD Simulation Approach
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    Chapter 9 Characterization of Si Detectors
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    Chapter 10 Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL
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    Chapter 11 Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation
Attention for Chapter 8: Capacitances in P + N Silicon Pixel Sensors Using 3-D TCAD Simulation Approach
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Chapter title
Capacitances in P + N Silicon Pixel Sensors Using 3-D TCAD Simulation Approach
Chapter number 8
Book title
Si Detectors and Characterization for HEP and Photon Science Experiment
Published by
Springer, Cham, January 2019
DOI 10.1007/978-3-030-19531-1_8
Book ISBNs
978-3-03-019530-4, 978-3-03-019531-1
Authors

Ajay Kumar Srivastava

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