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Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

Overview of attention for article published in Nanoscale Research Letters, August 2012
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Title
Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET
Published in
Nanoscale Research Letters, August 2012
DOI 10.1186/1556-276x-7-467
Pubmed ID
Authors

Michael Loong Peng Tan, Georgios Lentaris, Gehan AJ Amaratunga

Abstract

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

Mendeley readers

The data shown below were compiled from readership statistics for 37 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Malaysia 1 3%
United States 1 3%
India 1 3%
Unknown 34 92%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 15 41%
Student > Master 5 14%
Professor > Associate Professor 3 8%
Researcher 3 8%
Student > Doctoral Student 2 5%
Other 4 11%
Unknown 5 14%
Readers by discipline Count As %
Engineering 22 59%
Materials Science 4 11%
Computer Science 2 5%
Physics and Astronomy 1 3%
Unknown 8 22%

Attention Score in Context

This research output has an Altmetric Attention Score of 1. This is our high-level measure of the quality and quantity of online attention that it has received. This Attention Score, as well as the ranking and number of research outputs shown below, was calculated when the research output was last mentioned on 19 August 2012.
All research outputs
#11,048,811
of 12,429,961 outputs
Outputs from Nanoscale Research Letters
#453
of 798 outputs
Outputs of similar age
#106,767
of 124,881 outputs
Outputs of similar age from Nanoscale Research Letters
#1
of 2 outputs
Altmetric has tracked 12,429,961 research outputs across all sources so far. This one is in the 1st percentile – i.e., 1% of other outputs scored the same or lower than it.
So far Altmetric has tracked 798 research outputs from this source. They receive a mean Attention Score of 2.2. This one is in the 1st percentile – i.e., 1% of its peers scored the same or lower than it.
Older research outputs will score higher simply because they've had more time to accumulate mentions. To account for age we can compare this Altmetric Attention Score to the 124,881 tracked outputs that were published within six weeks on either side of this one in any source. This one is in the 1st percentile – i.e., 1% of its contemporaries scored the same or lower than it.
We're also able to compare this research output to 2 others from the same source and published within six weeks on either side of this one. This one has scored higher than all of them