Si Detectors and Characterization for HEP and Photon Science Experiment

Chapter 1 Development of Si Detectors for the CMS LHC Experiments

Chapter 2 Physics and Technology of Si Detectors

Chapter 3 Performance of MCz Si Material for p + n − n + and n + p − p + Si Sensor Design: Status and Development for HL-LHC

Chapter 4 Development of Radiation Hard Pixel Detectors for the European XFEL

Chapter 5 T-CAD Simulation for the Designing of Detectors

Chapter 6 Development of Radiation Hard p + n Si Pixel Sensors for the European XFEL

Chapter 7 Analysis & Optimal Design of Radiation Hard p + n Si Pixel Detector for the Next generation Photon Science Experiments

Chapter 8 Capacitances in P + N Silicon Pixel Sensors Using 3-D TCAD Simulation Approach

Chapter 9 Characterization of Si Detectors

Chapter 10 Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL

Chapter 11 Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation