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Recent Advances in PMOS Negative Bias Temperature Instability

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Attention for Chapter 9: BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs
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Chapter title
BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs
Chapter number 9
Book title
Recent Advances in PMOS Negative Bias Temperature Instability
Published by
Springer, Singapore, November 2021
DOI 10.1007/978-981-16-6120-4_9
Book ISBNs
978-9-81-166119-8, 978-9-81-166120-4
Authors

Parihar, Narendra, Samadder, Tarun, Choudhury, Nilotpal, Huard, Vincent, Mahapatra, Souvik