Chapter title |
Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors
|
---|---|
Chapter number | 15 |
Book title |
Biosensors and Biodetection
|
Published in |
Methods in molecular biology, March 2017
|
DOI | 10.1007/978-1-4939-6911-1_15 |
Pubmed ID | |
Book ISBNs |
978-1-4939-6910-4, 978-1-4939-6911-1
|
Authors |
Jiangwei Liu, Yasuo Koide |
Editors |
Ben Prickril, Avraham Rasooly |
Abstract |
Diamond is regarded as a promising material for fabrication of high-power and high-frequency electronic devices due to its remarkable intrinsic properties, such as wide band gap energy, high carrier mobility, and high breakdown field. Meanwhile, since diamond has good biocompatibility, long-term durability, good chemical inertness, and a large electron-chemical potential window, it is a suitable candidate for the fabrication of biosensors. Here, we demonstrate the fabrication of hydrogenated diamond (H-diamond) based metal-insulator-semiconductor field-effect transistors (MISFETs). The fabrication is based on the combination of laser lithography, dry-etching, atomic layer deposition (ALD), sputtering deposition (SD), electrode evaporation, and lift-off techniques. The gate insulator is high-k HfO2 with a SD/ALD bilayer structure. The thin ALD-HfO2 film (4.0 nm) acts as a buffer layer to prevent the hydrogen surface of the H-diamond from plasma discharge damage during the SD-HfO2 deposition. The growth of H-diamond epitaxial layer, fabrication of H-diamond MISFETs, and electrical property measurements for the MISFETs is demonstrated. This chapter explains the fabrication of H-diamond FET based biosensors. |
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